Abstract
Junction temperatures of GaInN and AlGaN UV LEDs are analytically investigated in this paper. GaInN and AlGaN UV LEDs have a wide variety of applications such as lighting, displays, spectrofluometry, photocatalytic processes, and high resolution optics. An analytical method is employed to analyze the junction temperature variations of GaInN and AlGaN UV LEDs with injection currents. The junction temperature is related to material properties, quantum efficiency, thermal resistance, and series resistance of LEDs. The results of GaInN and AlGaN UV LEDs predicted by this study agree with these obtained from emission peak shift method and forward voltage method.
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