Abstract
Junction temperatures of GaInN and AlGaN UV LEDs are analytically investigated in this paper. GaInN and AlGaN UV LEDs have a wide variety of applications such as lighting, displays, spectrofluometry, photocatalytic processes, and high resolution optics. An analytical method is employed to analyze the junction temperature variations of GaInN and AlGaN UV LEDs with injection currents. The junction temperature is related to material properties, quantum efficiency, thermal resistance, and series resistance of LEDs. The results of GaInN and AlGaN UV LEDs predicted by this study agree with these obtained from emission peak shift method and forward voltage method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
