Abstract

The nonlinear process of stimulated Raman scattering is important for silicon photonics as it enables optical amplification and lasing. To understand the dynamics of silicon Raman amplifiers (SRAs), a numerical approach is generally employed, even though it provides little insight into the contribution of different SRA parameters to the signal amplification process. In this paper, we solve the coupled pump-signal equations analytically under realistic conditions, and derive an exact formula for the envelope of a signal pulse when picosecond optical pulses are amplified inside a SRA pumped by a continuous-wave laser beam. Our solution is valid for an arbitrary pulse shape and fully accounts for the Raman gain-dispersion effects, including temporal broadening and group-velocity reduction (a slow-light effect). It can be applied to any pumping scenario and leads to a simple analytic expression for the maximum optical delay produced by the Raman dispersion in a unidirectionally pumped SRA. We employ our analytical formulation to study the evolution of optical pulses with Gaussian, exponential, and Lorentzian shapes. The ability of a Gaussian pulse to maintain its shape through the amplifier makes it possible to realize soliton-like propagation of chirped Gaussian pulses in SRAs. We obtain analytical expressions for the required linear chirp and temporal width of a soliton-like pulse in terms of the net signal gain and the Raman-dispersion parameter. Our results are useful for optimizing the performance of SRAs and for engineering controllable signal delays.

Highlights

  • Despite inherent nonlinear losses, which at high optical powers can diminish the advantages offered by silicon-on-insulator (SOI) technology, SOI waveguides hold strong potential for applications in future telecommunication industry [1,2,3]

  • Only a few centimeters of propagation through a silicon waveguide are required for two optical beams to change their spectra, energy, phase, and polarization owing to stimulated Raman scattering (SRS), self-phase modulation (SPM), cross-phase modulation (XPM), and free-carrier effects [7,8,9,10,11,12,13,14]

  • We show in this paper how a chirped Gaussian pulse can completely restore its intensity profile after passing through a silicon Raman amplifier

Read more

Summary

Introduction

Despite inherent nonlinear losses, which at high optical powers can diminish the advantages offered by silicon-on-insulator (SOI) technology, SOI waveguides hold strong potential for applications in future telecommunication industry [1,2,3]. To better understand the advantages of silicon over fused silica for all-optical signal processing, it is worth comparing the efficiency of the Kerr and Raman effects in these two media. We define the NRF as the ratio of the intensity integrals for two beams of equal powers propagating through a silicon waveguide and an optical fiber [15], 10-2 weak FCA regime. Free-carrier absorption (FCA) is stronger than two-photon absorption (TPA) and linear losses, near the waveguide input. In this paper we derive, for the first time to the best of our knowledge, an analytical solution that describes Raman amplification of an arbitrary optical pulse in silicon waveguides under CW pumping. We show in this paper how a chirped Gaussian pulse can completely restore its intensity profile after passing through a silicon Raman amplifier

Propagation equation for the signal pulse being amplified
Propagation equation for the CW pump and its solution
Analytic solution of the propagation equation for signal pulses
General features of Raman amplification for picosecond pulses
Evolution of pulse energy and envelope for three specific pulse shapes
Soliton-like propagation of chirped Gaussian pulses in SRAs
Numerical examples and discussion
Findings
Conclusions
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call