Abstract
The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for the analysis. The presented model considers the short channel effects, junction depth, doping of the layers and metal gate work function. Results are validated with the 22 nm device geometry. The MOSFET with reduced channel doping reflects the corresponding reduction in the threshold voltage. The model can effectively analyze the SiGe p-MOSFET for device designing in the nanometer regime.
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