Abstract
The ability to apply multiple diagnostic techniques to complex material, biological, and device problems with the goal of obtaining analytical solutions is the daily objective of the typical analytical laboratory. This paper will describe the use of both microscopy and surface analysis diagnostic tools to evaluate routine and highly complex material and device problems often found in the semiconductor industry. The characterization requirements for silicon and III-V materials and devices cover a wide range of technology research and development programs. These programs involve the characterization of starting materials, doping and implant technologies, thin film technology, particle and contamination issues and final device inspection. Continued advances in ultra-shallow silicon devices and multi-quantum-well (MQW) lasers rely on the accurate introduction of doping elements, the ability to deposit high quality materials of specified layer thicknesses and on advances in fabrication and characterization tools.The complex analysis problems of evaluating ultra shallow junctions in sub-micron silicon devices and the measurement of grating depths and duty cycles in semiconductor lasers are the characterization challenges which will be addressed in this paper.
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