Abstract
In this paper, we consider two-signal and modified two-signal methods for measuring the S-parameters of passive two-ports and a method for adequately measuring the S-parameters of two-ports, such as transistors, developed on their basis. The methods are implemented using a coaxial simulator-analyzer of microwave amplifiers and oscillators in its measuring channels matched or mismatched with loads. The field of application and the interrelation between these methods are investigated, and their advantages and disadvantages are discussed. Data on the maximum measurement error of the methods are presented.
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