Abstract
An analytical mapping for electron trapping in chalcogenide glass (ChG)films is derived which equates anion formation (dissolution) reactions and carrier-trap statistics. Glass binaries composed of chalcogen atoms contain high densities of negative charge that result from chemical reactions involving free electrons. This process of anion formation and dissolution between an electron and a neutral species is shown to be equivalent to standard models for carrier statistics. The derived equivalence reduces chemical reaction equations into statistics calculations performed through conventional semiconductor device simulation. The proposed mapping is shown to be valid for both equilibrium and steady state photogeneration conditions. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
