Analytical Physics-Based Compact Current–Voltage Model for 2D-2D Resonant Tunneling Diodes

Abstract

In this paper, we develop an analytical model for the resonant current-voltage ( <bold xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–V)</b> characteristics of 2D-2D Resonant Tunneling Diodes. Starting from the Tsu-Esaki formalism, we consider the overall electrical potential distribution in the device layer structure, including the quantized space charge region in the emitter layer. Additionally, to obtain a more realistic model, we also take into account the scattering experienced by electrons during tunneling process through the double barrier region. These additional features greatly improve the accuracy of the proposed model when compared with others approaches reported in the literature. The device model is fully physics-based, allowing the computation of the <bold xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I-V</b> curve accordingly to the geometry and device structure of the RTD. The model is fully analytical and explicit, thereby well suited for circuit simulator environment. The model is validated against experimental data from distinct RTDs structures, providing excellent agreement.