Analytical–Monte Carlo model of the growth of In nanostructures during droplet epitaxy on the triangle-patterned GaAs substrates

Abstract

Kinetic Monte Carlo simulations combined with the analytical nucleation theory are used to study droplet epitaxy of indium on the GaAs substrates patterned with triangular-shaped nanoholes. The simulation results demonstrate that the growth on the Ga-stabilized surface provides much better selectivity than the formation of nanostructures on the As-stabilized surface because of the stronger bonding with As atoms of the substrate. We estimate technological parameters which allow obtaining required characteristics of nanostructures with precise positioning and complete filling of holes. The distance between nanostructures is considered to be controlled by the growth temperature at an appropriate interhole distance. At the same time, dimensions of nanostructures are outlined by the geometrical parameters of holes and can be adjusted by the deposition thickness.