Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors

Abstract

The conventional theory of the bipolar junction transistor (BJT) does not clarify the electric field and its effect on the carrier transit in the uniformly doped base region, although the electric field is considered to be a second-order effect at high-level injection. In this study, analytical models of the carrier distribution, electric field, and carrier transit time in the base region are developed without making additional assumptions. It is found that the electric field may change direction, from forward to reverse, as long as the injection level reaches a criterion, affecting the carrier transport behavior. The models are based on the renovated p–n junction theory, provide insight into the carrier transit and are able to cover all levels of injection without the need to handle the low- and high-level injection separately. These models hold significance in retrieving the theoretical integrity of bipolar junction devices, and can be useful for further investigation in structure design, capacitance control, and AC performance optimization of the p–n junction-based device.