Abstract
An analytical two-dimensional (2D) model is developed to obtain expressions for various parameters of triple-material trigate junctionless tunnel field-effect transistors (TMTG-JTFETs). The 2D Poisson’s equation uses the superposition approximation method to calculate the sum of potentials arising from different point charges. The electric field distribution in the channel is obtained from the gradient of the electric potential. The drain current of the device is calculated using the Kane’s model in the presence of an electric field and a band structure. The TMTG-JTFET, with a channel length of 40nm, exhibits significant electrical characteristics with very low off-current (Ioff) and high on-current compared to a dual-material double-gate TFET. To validate the model, analytical results are confirmed via comparison with technology computer-aided design simulation results.
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