Abstract
In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from −50 to 200 °C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic relationship. An analytical model for the overall noise parameters including temperature dependence is proposed based on the Pucel's PRC model and verified with the measured temperature-dependent noise parameters. The feedback capacitance C gd was found to be important to accurately simulate all the measured noise parameters over temperature.
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