Abstract
This paper reports analytical models of subthreshold current and subthreshold swing for the Schottky-Barrier source/drain (S/D) double gate-all-around (DGAA) MOSFETs. The subthreshold current model presented in this work is formulated by considering both thermionic transport as well as quantum-mechanical tunneling components of the current, which is dominant in the subthreshold regime of the Schottky-Barrier S/D DGAA MOSFETs operation. The proposed subthreshold current model exhibits the ambipolar behavior because of both hole and electron tunneling mechanism found in Schottky-Barrier S/D DGAA MOSFETs. The impact of variations in device physical parameter and bias conditions like channel thickness and drain voltage on the subthreshold characteristics of Schottky-Barrier S/D DGAA MOSFETs has been discussed. The results obtained from the proposed model have been validated against the results obtained from the 3-D device simulator.
Published Version
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