Abstract
We propose a new and simple analytical model taking into account of the polarization charge effects in order to assess the performance of InGaN-based PIN solar cells. The main contribution of this study consists in the derivation of new expressions of both diffusion and generation recombination currents to take into account of the polarization charges. The validity of the model is assessed through a comparison to numerical calculations, using the one dimensional self-consistent Schrödinger-Poisson equations and previously published theoretical and experimental works. The model is shown to be in a good agreement with experimental data. As expected, it is shown that the spontaneous and piezoelectric polarizations have a beneficial effect when the InGaN layer is grown on the N-face GaN/InGaN solar cells.
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