Abstract
An analytical model of parasitic capacitance in inserted-oxide FinFETs (iFinFETs) is proposed. A comparative study on the parasitic capacitance of contemporary multigate devices conforming to 7-nm technology node targets is presented. The proposed model is validated against 3-D Technology Computer-Aided Design (TCAD) simulations. Dependence of the iFinFET parasitic capacitance on device design parameters, such as the inserted-oxide thickness ( ${T}_{\textsf {iox}}$ ) and inserted-oxide recess ( ${T}_{\textsf {rec}}$ ), is shown using the proposed model and TCAD simulations.
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