Year-end Sale % OFF 
Abstract
MOSFET conductance parameters: channel transit-time constant, channel resistance and inversion-layer mobility were studied using a transmission line equivalent circuit for the conductance channel in the 296-77 K temperature range. The temperature dependence of channel transit time constant is modeled using temperature-sensitive parameters such as inversion-layer mobility, the Fermi potential, intrinsic carrier concentration and threshold voltage. It is shown that the channel time constant and channel resistance are strongly sensitive to the temperature variation in the inversion region. Channel inversion layer mobilities are also calculated as a function of effective transverse electric field from the peak frequency in the conductance curve at 296 and 77 K, respectively. It is shown that the peak frequency in the a.c. conductance curve is sensitive to temperature variation due to its dependence on channel time constant.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
