Abstract
In this letter, structural modification of a conventional tunnel field effect transistor (TFET) device is presented to act as an effective pH sensor. The change in hydrogen ion concentration in the aqueous solution is to be detected by the present broken gate (BG) TFET based pH sensor with its semiconducting material being modified as the electrolytic region. The chemical reactions at the interface of the gate dielectric and the electrolyte generate a surface charge density, making the device sensitive to pH. An analytical model of the BG TFET is developed here to capture the impact of pH variations on surface potential and drain current characteristics of the device. The sensitivity of the device is then investigated by extracting the threshold voltage shift as the pH values of the injected solution are varied. The accuracy of the analytical results is further corroborated by ATLAS simulator extracted data.
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