Abstract
A simple analytical dual-gate hetero-structure field-effect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced g/sub m//g/sub d/ and C/sub gs//C/sub dg/ ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
