Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition

Abstract

Electrical parameters such as threshold voltage, drain-source current, and transconductance are studied. The channel charge is reduced with the increase in the diffusion coefficient of the implanted ions. Inclusion of a diffusion effect due to annealing shows an increase in the threshold voltage under normally ON condition and a reduction under normally OFF condition. At a fixed implant dose, anneal temperature can change the device from normally ON to OFF and vice versa, depending on the nature of the dopant and the anneal temperature. Drain-source current and transconductance also get reduced compared to the case where diffusion of the implanted ions due to annealing is not considered. >