Abstract
Here, the effect of Al x In 1-x N/GaN quantum dots in intermediate band solar cell is simulated in MATLAB by practicing Schrodinger equation as stated in Kronig-Penney model under ideal conditions. Blackbody radiation function is utilized to calculate the concentration of photon flux absorbed in the system. The device key performance parameters such as short circuit current density, J sc , open circuit voltage, V oc , and conversion efficiency, $\eta $, have been demonstrated. The relationship of IB width and IB position in host bandgap are also discussed in light of tuning QD size, dot spacing and aluminum content. Reliable performance of maximum efficiency of 55.74% are noticed when Dot size: 3.75nm, Dot spacing: 3nm and Al content: 0.27%.
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