Abstract
The three-gate (TG) silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) is proposed as an innovative type of device for use in high-density and high-speed applications. The new design is expected to exhibit excellent immunity against short-channel effects (SCEs) as well as reduced leakage current. To investigate the subthreshold characteristics of the device, a physically based analytical model for the channel potential and threshold voltage is developed based on an analytical solution of the three-dimensional Poisson equation with suitable boundary conditions. Using the model, design features including important device parameters and bias condition are examined and compared with a classical SOI-MESFET. The accuracy of the model is validated by comparison of the analytical results with the results of Silvaco simulations as well as experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
