Abstract
A new strategy to significantly enhance the nonlinearity of double-barrier resonant tunneling diode (RTD) in the positive differential resistance region is theoretically proposed and experimentally demonstrated. An analytical model containing physical insight into the resonant tunneling process is established to bridge the nonlinearity of the current–voltage curve and the band-structure information of RTD. It intuitively shows that the intrinsic current responsivity of RTD as well as its nonlinearity can be greatly improved via band-structure engineering, as enhancing the resonant energy level of the well and reducing the current before the resonant tunneling process. The validation of the proposed model and the associated band-structure engineering strategy are verified by both device simulation and experiments. A RTD device with intrinsic current responsivity of 6.74 A/W is realized, while the peak-to-valley current ratio (PVCR) is also as large as 8.92. This method provides a new pathway to design high-performance terahertz (THz) detectors using double-barrier RTD and may share new perspective on the potential of RTD-based THz transceivers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.