Analytical model of subthreshold swing of a gate and channel engineered double gate MOSFET

Abstract

AbstractWe have developed a 2‐dimensional analytical model to study the subthreshold swing and channel conductance of a gate and channel engineered double gate MOSFET. Basic diffusion equation has been considered to model the drain to source current of the device in subthreshold region and expressions of the device parameters like subthreshold swing and channel conductance have been derived. Subthreshold swing variations of the device with varied materials, channel, and effective oxide layer thickness and channel length have also been investigated. Changes in subthreshold swing owing to different doping profile concentrations have been explored. Effect of similar device parameters on the channel conductance of the device has been examined as well. Another important observation of the work is the pseudo flat band condition of the device structure based on the intersecting point of body potentials of the device at different thickness of the channel. The analytical results of the proposed model have been validated with the numerical results from commercially available 2‐dimensional device simulator.