Abstract
Analytical models of drain current of strained-Si/strained-Si 1− Y Ge Y /relaxed-Si 1− X Ge X ( X < Y) n-channel and p-channel MOSFETs are presented. The field-dependent mobility variations and velocity saturation of carriers are taken into account in these models. The drain current model of p-channel MOSFET considers carrier transport at the top heterointerface in SiGe as well as at the Si/SiO 2 interface. These models have been implemented in SABER, a circuit simulator. The results from the models show excellent agreement with experimental data.
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