Abstract
The spatial dependence of the material gain is introduced in the model of a semiconductor optical amplifier. Analytical expressions of the profiles of the carrier density, spontaneous emission, and amplified fields are obtained for amplifiers with arbitrary facet reflectivities. The nonuniformity of the carrier density is demonstrated in the case of low facet reflectivities. The model predicts the output saturation power and gain ripple, with good agreement with experimental results in resonant and traveling-wave amplifiers. Very low-gain ripple measured in low facet reflectivities amplifiers is explained by the model. A comparison with the uniform gain model shows that important deviations can occur in the case of low facet reflectivities. It is also shown that with the currently achievable low facet reflectivities, the maximum available gain is limited by spontaneous emission.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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