Analytical model for off-state channel potential and electric field distribution in an N-polar GaN-based field-plated MIS-HEMT

Abstract

In this paper, we present an analytical model for the channel potential and electric field distributions in a gate field-plated N-polar Metal-Insulator-Semiconductor high electron mobility transistor (MIS- HEMT). The proposed model is derived on the basis of a solution of the two-dimensional Poisson's equation. This method can enable the prediction of the optimal dielectric thickness and minimum field plate length to achieve a uniform electric field distribution for a given drain voltage. The results obtained using our model are in good agreement with numerical results. The developed model will be useful for field plate engineering design of N-polar AlGaN/GaN MIS-HEMTs.