Abstract
Doping can lead to residual strain and change of elastic properties in silicon. Residual strain makes silicon wafer exhibit curvature, which are used for fabricate MEMS structure. The boron doping profile is not uniform through depth, which makes doped silicon become a inhomogeneous material or Functionally Graded Material. For boron-doped circular single crystal silicon wafer, a analytical method which based on functionally graded plate mechanics theory, is proposed to calculate its curvature. Example was used to verify the analytical method through 3D finite element simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.