Abstract
This chapter accumulates all the obtained results derived from the analytical models in Chaps. 3–5. These results take into account the various device parameters like dimensions of the channel, doping concentration, buried oxide thickness, and applied biases. For all three devices, the profile of surface potential and threshold voltage are plotted and discussed. The characteristics and excellence of the devices under study are investigated and compared with the conventional SOI MESFET. Also, the improvement in short-channel behavior of the presented devices is shown. Lastly, the TCAD simulation for each device is accomplished. The accuracy of the presented analytical models is verified by comparison with the numerical simulation results obtained by device simulator ATLAS from Silvaco.
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