Analytical Investigation of Electrons Capture Time Effect on the Threshold Current Density Reduction in QD Spin-Lasers

Abstract

In this paper, we solve numerically the rate equations governing the GaAs InAs / semiconductor spin with un-polarized and polarized laser field based on quantum dot active region in which As Ga Al MnAs 9 . 0 1 . 0 / Schottky tunnel barrier treats as the spin injector. We demonstrate simultaneously the effects of electron capture time, and injected current polarization on threshold current density reduction and normalized spin-filtering interval. The threshold current density reduction and normalized spin-filtering interval increases simultaneously with electrons capture time reduction and increase of injected current polarization. The maximum obtained threshold current density reduction and normalized spin-filtering interval values are0.353 and 0.90, respectively. We also calculate the spinup optical gain and obtain the conditions for achieving optimum optical gain. The maximum obtained spin-up optical gain value is 17.70.