Abstract
An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is 30% in p-AlxGa1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.
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