Abstract
The asymmetrical halo and dual-material gate structure is used in the surrounding-gate metal-oxide-semiconductor field effect transistor (MOSFET) to improve the performance. By treating the device as three surrounding-gate MOSFETs connected in series and maintaining current continuity, a comprehensive drain current model is developed for it. The model incorporates not only channel length modulation and impact ionization effects, but also the influence of doping concentration and vertical electric field distributions. It is concluded that the device exhibits increased current drivability and improved hot carrier reliability. The derived analytical model is verified with numerical simulation.
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