Abstract
An analytical drain current model is presented for the double-gate monolayer transition metal dichalcogenide (TMD) tunneling FET. The potential in the channel is obtained by applying Gauss’s law to the channel region. Based on Kane’s band-to-band tunneling model, analytical expressions for the tunneling generation rate and drain current are derived by using the tangent line approximation method, which could provide accurate results without any fitting parameters and improve the computational efficiency. The effects of device parameters on the potential profile and transfer characteristics are investigated. The accuracy of the proposed model is verified by comparing with the simulation tool.
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