Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

Abstract

Surface-potential-based drain current model is presented for amorphous InGaZnO thin-film transistors considering both exponential deep and tail trap states densities in the energy gap. The trap states densities are determined by the numerical calculation on the basis of the assumption that the trapped carrier concentration is much higher than the free carrier concentration. The analytical drain current model is developed consistent with the numerical calculation, and verified by the experimental data at different temperatures.