Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Abstract

Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.