Abstract
In this review, we compare the distinct properties of Carbon Nanotube Field Effect Transistor (CNTFET) based applications with MOSFET based applications in memory and digital electronics technology. In nanoelectronics circuitry, CNTFET has opened new dimensions with extreme opportunities of improvement in circuit performance due to its extreme mobility, ballistic conduction and so forth. Apart from being an excellent conductor, CNTFET can also be used as a memory unit for its good stability in storing a data bit and as digital circuits (multi-valued logic gates) for its better PDP and sensitivity. This paper discusses the design and read-write mechanisms of 6T and 8T CNTFET SRAM cell and a comparative study among themselves based on their corresponding advantages and disadvantages. Moreover, superiority of CNTFET SRAM over MOSFET SRAM is analyzed in terms of certain phenomena (such as scattering, defecttolerance and ability to work in low power supply) observed in them. At last, different types of ternary logic gates and how they will persevere the limitations of MOSFET logic gates with its PDP value, less power dissipation and better longevity have been discussed.
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