Abstract
A new analytical device model applicable to deep sub-micron MOSFETs is proposed. The new pseudo two-dimensional model includes velocity overshoot effect by the use of the extended drift-diffusion (EDD) model. Calculated current voltage characterisitcs agree well with the reported device characteristics of deep sub-micron MOSFETs. The model is found to be applicable to small geometry MOSFETs down to L=0.1 ?m.
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