Abstract
A method has been developed to link the geometry of the trapped charge distribution within irradiated insulators to the mirror plot shape, in a scanning electron microscope. We give a detailed analysis of the geometrical optic approximation which is used to evaluate the mirror image formation. We establish then analytical mirror relations obtained for diverse trapped charge distributions such as homoidal charge distribution, bipunctual and cylindrical ones. Knowledge of the charge distribution first moments enables us to investigate then their effect on the first terms of the mirror expression limited development. Finally, we apply these analytical expressions to evaluate certain characteristics of the charge distribution from an experimental mirror plot.
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