Abstract
An analytical technique is proposed to reveal the relaxation time distribution of dynamic charge events using the current noise spectrum of a transistor, by applying an inverse integral transformation to the McWhorter model. In the proposed method, the continuous relaxation-time distribution function G(τ) can be analytically derived from the noise spectra S(ω) without a spectrum deconvolution. The feasibility of the proposed method is demonstrated by characterizing the charge dynamics of tetraphenylporphyrin molecules dispersed on the surface of a GaAs-based nanowire field-effect transistor. Our analysis successfully verified the time constant of the molecule-related dynamic charge events and effects of photo-excitation.
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