Analytical demonstration of gate leakage current in AlGaN/GaN/InGaN/GaN DH-HEMT

Abstract

With the proliferation of semiconductor materials nowdays, high electron mobility transistor (HEMT) plays an imperious preamble in electronic industry. Latest double heterojunction HEMTs shows improved performance concerning carrier confinement but shows higher leakage current that is found here. The device specifies a 3-nm thin InGaN layer inserted into the conventional AlGaN/GaN HEMT structure. Gate leakage mechanism in AlGaN/GaN/InGaN/GaN HEMT is analyzed here for versatile applications for a long range of electric field and temperature sustainability. Comparing with measured data Poole-Frenkel (PF) emission and Fowler-Nordheim(FN) tunneling current has been considered as a dominant leakage mechanism in reverse bias condition. In contrast to conventional HEMT, Fowler-Nordheim(FN) tunneling current component is found higher in DH-HEMT here. In this research work an additional trap assisted tunneling current is also found to be presented here like the conventional HEMT. Possible reason of leakage current in double heterojunction HEMTs are explained here along with illustrations.