Abstract
The reverse conduction capability of MOSFETs is beneficial for the efficiency of a three-phase inverter. In this article, analytical expressions in closed form are presented which allow to quickly evaluate the conduction losses, considering the effect of the reverse conduction, and blanking time for both sinusoidal pulsewidth modulation operation with and without third harmonic injection. The losses of a three-phase silicon carbide MOSFET inverter suitable for traction applications are estimated with the proposed method and show good agreement of about 98.5% with measurements, performed with a calorimetric setup.
Highlights
The thermal capability and the low switching losses of silicon carbide (SiC) MOSFETs can be beneficial in comparison to classical silicon (Si) IGBTs when used in a threephase converter [1]–[4]
Available comparisons between SiC MOSFET and Si IGBT based converters show that SiC MOSFETs can achieve a more compact inverter design, while improving the system efficiency [1], [2]
The available comparisons in [1]–[9] are mainly based on analytical conduction-loss models in the literature [17]–[20] or provided by semiconductor manufacturers’ application manuals [21], [22] for different IGBT and MOSFET converter topologies. These models do not include the effect of the reverse conduction in the MOSFET inverter, referred to as third quadrant characteristic [23]–[25]
Summary
The thermal capability and the low switching losses of silicon carbide (SiC) MOSFETs can be beneficial in comparison to classical silicon (Si) IGBTs when used in a threephase converter [1]–[4]. The available comparisons in [1]–[9] are mainly based on analytical conduction-loss models in the literature [17]–[20] or provided by semiconductor manufacturers’ application manuals [21], [22] for different IGBT and MOSFET converter topologies These models do not include the effect of the reverse conduction in the MOSFET inverter, referred to as third quadrant characteristic [23]–[25]. In [30] the authors have presented analytical expressions to quickly evaluate the conduction losses, taking into account the effect of the reverse conduction and the blanking time Both sinusoidal PWM operation with and without third harmonic injection, which can be used for space vector modulation with small error, are derived in a closed form.
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