Abstract
Moore's Law compliance necessitates the use of high dielectric constant (k) (e.g. Hf, Ti, Zr, Ta) and low-k (e.g. silane chemistries) material thin films in place of traditional Si/SiO2 films. Chemical precursors of these films require characterization of trace-level impurities to avoid device failure. The reporting limits listed on precursor Certificates of Analysis require analytical methods such as inductively coupled plasma - mass spectrometry (ICP-MS) ion chromatography (IC) and gas chromatography - mass spectrometry (GC-MS), for determination of trace elements, chloride and precursor purity, respectively. Analytical challenges associated with characterizing these materials include precursor volatility, air and moisture sensitivity, parent element ICP-MS matrix effects and ICP-MS elemental and molecular interferences. In addition, sample preparation methods preceding the analyses must decompose the sample yet preserve the integrity and quantity of the analytes present in the original samples. This paper will describe analytical methods designed to meet these analytical challenges.
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