Abstract
Modeling of the subthreshold slope S and the threshold voltage V T has been done based on the fundamental equations governing the metal-oxide-semiconductor field-effect transistor (MOSFET). Taking the drift as well as the diffusion component of the current into account resulted in a physically complete description of the short-channel effect. The method calculates the potential from the 2D Poisson equation, the minority carrier density from the continuity equation and the weak inversion current density from the drift-diffusion model. As an example, the detailed calculation of the S factor is given. The new closed-form formula for S includes the L dependence in an accurate way.
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