Abstract
A satisfactory analytical approximate model of the potential distribution (u) in a semiconductor sample having a nondegenerate surface accumulation layer possessing an arbitrary surface potential and a constant impurity concentration N≳5×101 ni has been obtained by means of joining the two different approximate expansions of the electrical field in terms of ue−u for large values of u and in terms of u for small values of u. The approximation deviates from the numerical solution by less than 1% through the whole sample.
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