Abstract
ABSTRACTTransient photoconductive response of undoped a-Si:H has been studied; the changes were analysed between two slightly different steady-state illumination conditions, at room temperature. A theoretical model is developed to describe transient photoconductivity; it yields good agreement with the measured curves for a whole range of light intensities. Numerical evaluations allows one to extract the recombination time of electrons. Comparison with steady-state photoconductivity yields a band mobility of free electrons between 0.1 and 6 cm2V−1s−1, depending upon sample quality.
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