Abstract
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature, the temperature dependence on threshold voltage, sheet carrier concentration and drain current is studied. Further, the temperature variation shows the applicability of the device in a variable thermal environment. The results show excellent agreement when compared with experimental data thereby proving the validity of the model.
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