Analytical and experimental studies of thermal noise in MOSFET's

Abstract

An analysis of the channel thermal noise in MOSFET's based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET's of a 1.2 /spl mu/m radiation hard CMOS process are presented. The calculated channel thermal noise coefficient /spl gamma/ as in i/sub d//sup 2///spl Delta/f=4kT /spl gamma/ g/sub do/, agrees well with experimental data for effective device channel length as short as 1.7 /spl mu/m. >