Abstract
Abstract We propose to explore analytically one of the most promising effects (soliton) for future applications in optical communication processing and memory devices, due to the nonlinearity inside low dimensional semiconductor systems. We focus on soliton propagation in microcavity wires. We derive analytical exact solutions that describe the stationary states of the soliton’s profile in the cavity. We present a scheme that gives such profiles for a given external confining potential. The obtained profiles compare favorably with existing experimental and numerical results.
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