Abstract
A physical analytic model is developed for behavior of electron transport, and for the output current-voltage (I-V ) characteristics in 4H-SiC metal-semiconductor field-effect transistors (MESFETs). In this model, different analytical expressions are used for the electron mobility as a function of electric field and for the velocity-field relationship. Compared with the empirical three-parameter model, the multiparameter mobility model proposed in this paper is comparatively more realistic, since it better reproduces the drift velocity-field characteristics obtained by Monte Carlo (MC) calculations. Thus, the resulting I-V characteristics are in excellent agreement with experimental data.
Published Version
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