Abstract
The threshold voltage, V th , of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for surface potential is obtained by solving Poisson's equation. Based on the potential model, an analytical expression for V th is achieved, with quantum mechanical effects and SB lowering effect included. It is found that V th will be raised by quantum mechanical effects and lowered by SB lowering effect. It is also found that, the influence of channel length on V th is complicated; when the channel length is 20 nm, V th is the smallest.
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