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Abstract
The conversion of low frequency noise into phase noise in microwave oscillators is studied through an analytical calculation of the pushing factor. This calculation is based on a simplified equivalent circuit for two types of active devices : field effect transistors (Fet) and heterojunction bipolar transistors (hbt). The preeminence in the conversion process of the gate- source capacitance in theFet and the base- emitter junction in thehbt is pointed out. Practical methods are proposed to reduce the phase noise in these circuits.
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