Abstract
Doping has been shown to not only provide additional degrees of freedom in the design of organic field-effect transistors (OFETs) but to increase their performance and stability as well. An analytical model based on the assumption of a square doping profile inside the channel is presented here that describes the effect of doping on the transfer characteristic of OFETs. The model is validated experimentally by a series of OFETs with varying doping conditions. The precise doping profile in the transistor channel is determined by fitting the capacitance/voltage response of doped metal-insulator-semiconductor (MIS) junctions using an AC small-signal drift-diffusion simulation. It is shown that the real doping profile deviates from the simplifying assumptions of the analytical model, i.e., it is found that the effective doping concentration at the dielectric/semiconductor interface is reduced. However, it is shown that the analytical model is not sensitive to this deviation as only the total density charges per unit area determine the changes in the transistor behavior. Overall, the presented theory provides new design rules that can be used to guide the development of doped OFETs with high performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.